| PART |
Description |
Maker |
| TLP1254C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP1016 |
(TLP1016 / TLP1017) PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| TLP1017 TLP1016 E006222 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC
From old datasheet system
|
Toshiba Semiconductor
|
| SPI-238-18 |
DDC50SF0 超小型光电断路器（单晶体管型
GaAs Infrared LED Ultraminiature photointerrupter (single-transistor type)
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| TLP1015 TLP1014 E006221 P1015 P1014 |
3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH LOGIC OUTPUT
From old datasheet system
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC 东芝光电断路器红外LED相机芯片
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| TLP867 TLP862 TLP866 |
PHOTOINTERRUPTER INFRARED + PHOTODARLINGTONTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| IR17-21C-TR8 IR17-21C_TR8 IR17-21C/TR8 |
1.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
Infrared Chip LED
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Lite-On Technology, Corp.
|
